RF SOI and SiGe Technologies

RF SOI and SiGe Technologies

Optimized balance of performance and integration for differentiated RF solutions

Semiconductor solutions for mobility, Internet of Things and 5G applications require future-ready technology to handle pervasive connectivity, fast access to data, increasing complexity and tougher standards and protocols.

Built on a cost-effective CMOS base, GLOBALFOUNDRIES RF silicon-on-insulator (SOI) and silicon germanium (SiGe) technology platforms are designed to deliver an optimal combination of performance, integration and power efficiency. With more than 30 billion RF SOI chips and 5 billion SiGe chips already shipped, the technologies are enabling a new era of connected intelligence by helping customers deliver more connectivity, more bandwidth and more data/data analysis in differentiated RF solutions across markets and applications. Spanning a broad range of process technology nodes, our RF SOI and SiGe platforms include:

  • Connectivity-optimized RF SOI and SiGe power amplifier (PA) technology families for cellular and Wi-Fi front-end modules (FEMs) in a host of mobility applications, including smartphones, tablets, notebook computers, access points and IoT solutions
  • An advanced RF SOI technology, 45RFSOI, for integrated millimeter wave (mmWave) FEMs and beamforming in 5G base stations and smartphones, phased array front ends in internet broadband satellite terminals, automotive RADAR and other high-performance applications
  • High-performance SiGe (SiGe HP) technologies for the most demanding applications, including wireless infrastructure, optical communications, high speed serial interfaces, automotive RADAR and LIDAR, gesture sensing, aerospace and test/measurement systems

Our 300 mm 8SW technology platform, the newest addition to our RF SOI portfolio, is designed to provide best-in-class RF switch, low noise amplifier (LNA) and logic performance. Featuring all-copper interconnects, 8SW provides more current carrying capability and improved self-gain, while offering up to 70% power reduction, 20% lower Ron*Coff performance and 20% smaller overall die size compared to its predecessor, 7SW.

GF RF SOI and SiGe technologies are complemented by:

  • Comprehensive design enablement with process design kits featuring excellent model-to-hardware correlation
  • Deep manufacturing expertise
  • Expanded, multi-fab manufacturing
  • Ongoing investment, innovation and technology roadmap enhancements

Regularly scheduled, cost-effective multi-project wafer (MPW) runs are available and enable fast prototyping so you can see results in hardware early. Contact a GF sales representative for the latest MPW schedule.

Learn more about RF CMOS technologies.

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