22FDX offers an excellent combination of performance, power consumption and cost for IoT, mainstream mobile, RF connectivity and networking.
22FDX® employs 22nm Fully-Depleted Silicon-On-Insulator (FD-SOI) technology that delivers FinFET-like performance and energy-efficiency at a cost comparable to 28nm planar technologies. While some applications require the ultimate performance of three-dimensional FinFET transistors, most wireless devices need a better balance of performance, power consumption and cost.
22FDX provides an excellent path for cost-sensitive applications. 22FDX delivers a 20 percent smaller die size and 10 percent fewer masks than 28nm, as well as nearly 50 percent fewer immersion lithography layers than foundry FinFET.