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22FDX® offers an excellent combination of performance, power consumption and cost for IoT, mainstream mobile, RF connectivity and networking.

22FDX® employs 22nm Fully-Depleted Silicon-On-Insulator (FD-SOI) technology that delivers FinFET-like performance and energy-efficiency at a cost comparable to 28nm planar technologies. While some applications require the ultimate performance of three-dimensional FinFET transistors, most wireless devices need a better balance of performance, power consumption and cost.

22FDX® provides an excellent path for cost-sensitive applications. 22FDX® delivers a 20 percent smaller die size and 10 percent fewer masks than 28nm, as well as nearly 50 percent fewer immersion lithography layers than foundry FinFET.


  • Ultra-low power consumption with 0.4V operation
  • Software-controlled transistor body-biasing for flexible trade-off between performance and power
  • Integrated RF for reduced system cost and back-gate feature to reduce RF power up to ~50%
  • 70% lower power than 28HKMG

22FDX® consists of a family of differentiated products architected to enable applications across a variety of market segments:

22FDX-ULP: Ultra-Low Power

  • 70% lower power vs. 28nm HKMG
  • FinFET-like performance
  • Ultra low-voltage operation (~0.4V)
  • Dynamic tradeoff of performance vs. power with body-biasing

22FDX-ULL: Ultra-Low Leakage

  • Additional devices for ultra-low static leakage (~1pA/μm)
  • ULL SRAM with <1pA/cell leakage
  • IP for BTLE, Zigbee and Thread

22FDX-RFA: RF & Analog

  • Integrated RF and Analog: reduced system cost and power
  • Resistors, capacitors, inductors, transmission lines, transformers
  • RF BEOL w/ Ultra Thick Metal stacks
  • RF design enablement to leverage body-bias
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