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SiGe HP Technologies

SiGe HP Technologies

Performance-optimized platforms for demanding high-speed, low noise applications

The GLOBALFOUNDRIES high-performance silicon germanium BiCMOS technology family, SiGe HP, is optimized for a wide array of current and emerging performance-driven RF applications.

 Highest
Performance
Performance/
Value
PlatformSiGe 9HPSiGe 8XPSiGe 8HPSiGe 8WLSiGe 7WL
Key Features
CMOS node90 nm130 nm180 nm
NPN Ft/Fmax (GHz)310/370250/340200/265100/20060/120
Applications
Automotive RADARXXX  
Automotive LiDAR  X  
Wireless infrastructureXXX  
Gesture sensing X   
Optical communications: Data centerXX   
Optical communications: PON/GPON  XXX
High-speed serial interfaces: USB/PCIe XXX 
Test/measurement systemsXX   
Aerospace and defenseXXX  

The SiGe HP platforms provide differentiating performance that balances integration and value. Take advantage of multiple benefits:

  • Integrate extensive digital and RF function while leveraging a proven, economical silicon technology base
  • Get superior low-current/high-frequency performance with heterojunction bipolar transistors (HBTs) that also enable operation at high junction temperatures
  • Maximize design flexibility and optimization with PDKs comprising a broad mix of standard and optional elements, including RF-centric features, thick dielectrics, thick metals and TSVs

GF’s highest performance SiGe offering, SiGe 9HP, is fully qualified on GF’s 200 mm manufacturing process, with PDKs available now. The migration of SiGe 9HP to a 300 mm manufacturing process continues the company’s SiGe leadership by providing increased production efficiency and reproducibility to help your company meet marketplace demands. Client prototyping of 9HP on 300 mm multi-project wafers is underway.

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