• Market Solutions
  • Technology Solutions
  • Design & Services
  • News & Events
  • Tech Resources
  • About Us
  • More
RF SOI Technologies

RF SOI Technologies

Industry-leading performance and integration advantages for 4G LTE, mmWave and 5G applications

As an RF industry leader, GLOBALFOUNDRIES is working with forward-thinking companies to enable new levels of connectivity—and an era of connected intelligence—with a portfolio of established and advanced RF SOI platforms targeting low noise amplifiers, RF switches, phased-array antennas and control function integration in RF front-end modules for advanced 4G LTE, mmWave beamforming and sub 6 GHz 5G applications.

45RFSOI

  • Best-in-class switch linearity and lowest Ron*Coff for high-power RF switches
  • High voltage handling and high Pout capabilities
  • High fmax and ft
  • Thick Cu and Al BEOL for high Q
  • Lowest substrate loss
  • Proven device stacking

8SW RF SOI

  • Industry’s first 300 mm RF SOI foundry solution
  • Best-in-class switch + LNA + logic performance
  • All-copper interconnects for more current carrying
  • Provides up to 70% power reduction, 20% better Ron*Coff performance and 20% smaller overall die size compared to 7SW

130RFSOI

  • 300 mm RF SOI foundry solution offering high integration levels (switch, LNA, PA and logic)
  • Outstanding RF CMOS PA performance
  • All-Cu interconnects, including 2 ultra-thick Cu metal layers for high-Q, high-current interconnects and passives
  • Low leakage, high integration and high RF performance for small form-factor, long battery-life applications

7SW RF SOI

  • Up to 30% better performance and up to 30% smaller chip area than 7RF SOI
  • Low leakage logic libraries for extended battery life
  • Dedicated transistors improve LNA performance for better reception range and battery life
  • Options enable trade-offs for Ron*Coff vs. power-handling performance, while offering excellent linearity

7RF SOI

  • Multiple options available to help you meet design and budget targets:
    • Low distortion device (LowD): Boosts performance and enables further reductions in insertion loss or chip area
    • Fewer masks (NoBTQ): Value-optimized offering for RF switches
    • 300 mm substrate option for productivity and cost benefits
 Highest
Performance
Performance/
Value
Platform45RFSOI8SW RF SOI130RFSOI7SW RF SOI7RF SOI
Key Features 
CMOS node45 nm130 nm130 nm180 nm180 nm
Applications
Integrated mmWave FEMsX    
Phased array front ends in internet broadband satellite terminalsX    
Sub 6 GHz FEM XX  
Automotive RADARX    
4G LTE advanced and 3G base stations XXXX
Small cellsXXX  
Access pointsX    
4G LTE advanced and 3G smartphones/tablets XX  
IoT devicesXXXXX
Back to Top