22FDX offers the best combination of performance, power consumption and cost for IoT, mainstream mobile, RF connectivity, and networking.
GLOBALFOUNDRIES 22FDX fills an industry need, allowing companies to move beyond planar 28nm bulk CMOS without incurring the cost and design challenges of 14nm finFETs. The higher Ft and Fmax characteristics at much lower gate voltages support 5G and mmWave RF solutions.
Superior analog design is possible due to 22FDX’s variable transistor width, back biasing capability, lower transistor mismatch, and other fundamental advantages. Forward biasing allows 22FDX to match the performance of 14nm FinFETs.
GF 22FDX platform employs 22nm Fully-Depleted Silicon-On-Insulator (FD-SOI) technology that delivers FinFET-like performance and energy-efficiency at a cost comparable to 28nm planar technologies. While some applications require the ultimate performance of three-dimensional FinFET transistors, most wireless devices need a better balance of performance, power consumption and cost. 22FDX provides the best path for cost-sensitive applications. The 22FDX platform delivers a 20 percent smaller die size and 10 percent fewer masks than 28nm, as well as nearly 50 percent fewer immersion lithography layers than foundry FinFET.
Production: Q2 2017
|Design aids(accelerators)||Cadence EAD(Electrical Aware Design)|
|Cadence LDE Flow(LDE-API)|
|LVS & Electrical rule checks||Calibre|
|Electromigration analysis, |
|Apache Totem/Redhawk EMIR|
|Place and Route techfiles||ICC|
Litho hot-spot(pattern match), Scoring,Fixing
|Calibre Dfm DRC+(patt.matching), YES (fixing), POP(fixing) MAS|
|Cadence MVS (pattern matching), POP(fix)|
|Synopsis ICV DRC+(pattern matching), POP (fix)|
|Electro-magnetic methodology||Integrated EMX|
|Lorentz Solutions PEAKVIEW|