Third Party Press Releases

Everspin to Demonstrate the Benefits of its Proprietary pMTJ MRAM Technology at Flash Memory Summit

Aug 03, 2016

Chandler, AZ, August 3, 2016. Everspin Technologies strengthens its leadership position in ST-MRAM by sampling the world’s first product using perpendicular magnetic tunnel junction (pMTJ) based ST-MRAM to customers. This 256Mb DDR3 product is the highest density commercially available perpendicular ST-MRAM in the market.

Back to Top