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Internet of Things

The rise of IoT and the cloud and their associated technologies and platforms are slowly but surely fueling the emergence of new market segments that are shaping our way of life. The versatility of the devices combined with the power of networks and data centers to marshall the data for the end­spaces is what is transforming pervasive computing to intelligent computing.

The IoT applications and use-cases that span clients/devices, networks, and data centers drive new requirements for semiconductors including ultra low power, ultra low leakage, smaller and denser packaging, and cost effectiveness. These requirements are at the heart of the differentiated solutions developed by GLOBALFOUNDRIES that feature low-power, cost-effective performance, RF, embedded memory, analog/power, and packaging. This “under-the-hood” differentiation at the semiconductor level enhances the user and application experiences for IoT.

Success in the Internet of Things requires that companies work together to innovate and differentiate. By forging long-view relationships with clients and partners to design and develop optimized solutions and driving excellence in execution – high yields and on time delivery – each and every one of us has a direct role to play in realizing the full potential of this critical opportunity.

Market Overview

Breadth of the IoT Applications Space

IoT Semiconductor Value

The Differentiator

The Differentiator – Vertical Integration of Value

GF Solutions

IoT Tiers and Customer Traction

Client Applications

IoT Tiers and Customer Traction



Processors / SoCs

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RF & Transceivers

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Analog, Mixed-signal & Power

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Processors / SoCs
  • Processors / SoCs
  • RF & Transceivers
  • Analog, Mixed-signal & Power
  • Processors / SoCs
  • RF & Transceivers
  • Analog, Mixed-signal & Power

Key IoT Requirements and Suitability Matrix

IOT Positioning Strategy Per Tier

GF Products130nm - 55LPx, 22FDX® (FD-SOI)40nm, 28SLP, 22FDX® (FD-SOI)12LP, 12FDXTM (FD-SOI), and below
ClassARM® Cortex® M0 to M3/M4ARM® Cortex® M3/M4 to Cortex®-A9ARM® Cortex®-A9+, Intel Xeon
SpeedUp to 250MHzUp to 1 GHzAbove 1 GHz
MemoryOTP / MTP: up to 256KBEmbedded NVM Flash/MTP: up to 2MBExternal Flash > 4GB
OSNone / Simple RTOS / ProprietaryProprietary/ RTOS / Android WearMobile OS: Android / Wear / iOS HLOS: / Windows 10 IoT Enterprise
Connectivity (RF)Bluetooth® Smart (BLE) / 15.4, Zigbee – typically off-chipBLE /15.4, Zigbee, Wi-Fi – Integrated Cellular LTE Cat 1 / M – External (optional)BLE / 15.4, Wi-Fi, USB; LTE Cat 1/ M /NB-IoT → 5G – External
Metal Layers 4-78-10


RF CMOS-Application Landscape and Technology mapping

IoT Tiers and Customer Traction


Application24 GHz77-86 GHz
Machine-2-Machine (M2M)SiGe PA: 5PAe, 1KW5PAe, 5PAx and 1K5PAxSiGe HP: 8HP, 8XP
7SW, 45RFSOI (mmWave) 
Industry 4.0SiGe PA: 5PAe, 1KW5PAe, 5PAx and 1K5PAxSiGe HP: 8HP, 8XP
7SW, 45RFSOI (mmWave) 
Smart Homes / BuildingsSiGe PA: 5PAe, 1KW5PAe, 5PAx and 1K5PAxSiGe HP: 8HP, 8XP
7SW, 45RFSOI (mmWave) 
Smart Cities / GridsSiGe PA: 5PAe, 1KW5PAe, 5PAx and 1K5PAxSiGe HP: 8HP, 8XP
7SW, 45RFSOI (mmWave) 
TeleHealth / MedicineSiGe PA: 5PAe, 1KW5PAe, 5PAx and 1K5PAxSiGe HP: 8HP, 8XP
7SW, 45RFSOI (mmWave)
Smart Cities / GridsSiGe PA: 5PAe, 1KW5PAe, 5PAx and 1K5PAxSiGe HP: 8HP, 8XP
7SW, 45RFSOI (mmWave) 
SiGe Usage Guidelines7SW, 45RFSOI Usage Guidelines
High PA Output PowerLow to Medium Output Power
Low Power / high frequency operationLow Power / Low to Medium Frequency Operation
Low to Medium Digital IntegrationHigh Digital Integration
Simplified Impedance Matching / mmWave BEOLSimplified Impedance Matching / mmWave BEOL (45RFSOI)
High Breakdown VoltagesLow to Medium Breakdown Voltages
High Operating VoltagesLow to Medium Operating Voltages
Excellent Thermal StabilityLNA+Switch integration
Low NF; 1/f noise 
GLOBALFOUNDRIES enables intelligent power systems of tomorrow in both 130nm BCDLite and 55nm BCDLite technologies.

For the IoT/wearable power market:

  • High-efficiency transient response at drive currents from 10-1000mA
  • Low Iddq to conserve power
  • Solutions with small footprints

Wearable PMIC


Key Metrics

  • Noise performance
  • Low leakage process (in single digit μA)
  • Charging currents (<600mA)
  • Low current (10-20mA) regulator with high PSRR

Battery Charger (Linear)

  • 200-400mA chargers
  • Low RDSon, low leakage


  • <7V BD, 20mA LED drivers
  • Low ripple, single digit mV

Linear Regulator

  • 20mA, High PSRR (>90dB across all freq)


  • Space constraints drive the need for a single inductor dual output interface


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