Cellular infrastructure and SATCOMs

GLOBALFOUNDRIES® (GF ®) is enabling 5G to live up to its hype with wireless network solutions that deliver the latency, speed and reliability clients can harness in the future-ready cellular base station and satellite communications (SATCOM) hardware—and that are essential for making immersive user experiences and industry transformation a reality.

These GF solutions are helping clients navigate 5G complexity challenges and rollout pressures, while minimizing CAPEX and OPEX expenditures, through a combination of application-optimized features and specialized RF post-fab turnkey services that build on our decades of RF expertise.

“…I don’t know if there’s anyone else in the world that does high volume mmWave test the way that you [GF] do—and the rapidity with which you’ve brought it up and done it successfully, and already delivered in full-scale production….GlobalFoundries has never let us down….”
Robert Donahue, Anokiwave CEO | March 2020

GF 5G cellular infrastructure & SATCOM solutions

5G mmWave
Superior performance with high Psat (up to 23 dBm) for cellular infrastructure & SATCOM FEMs and beamformers
5G mmWave
Superior performance with highest level Psat (up to 20 dBm) for cellular infrastructure & SATCOM FEMs and beamformer
5G sub-6 GHz
Outstanding performance for 5G sub-6GHz cellular infrastructure
5G sub-6 GHz & mmWave
High-performance and efficiency with Psat > 23 dbm for cellular infrastructure and SATCOM discrete power amplifiers.

5G mmWave cellular infrastructure & SATCOM FEMs using 45RFSOI

Mobile operators have aggressive targets for ensuring that cellular base station deployments and densification keep pace with 5G smartphone rollouts so users can enjoy the full range of new experiences these devices offer.

45RFSOI from GF can help clients meet this challenge. With more than a billion dollars (U.S.) in design wins*, the solution is already in high-volume production. Optimized for 5G mmWave cellular front-end module (FEM) and SATCOM applications, our 45RFSOI solution enables you to tap into high transmission power capabilities and industry-leading mmWave performance. This combination of benefits makes 45RFSOI superior choice for low-noise amplifiers (LNAs), power amplifiers (PAs), switches and in integrated FEMs that combine these elements, or in area and power-efficient beamformers.

“…Millimeter wave design is challenging. If it was easy, everyone would be doing it. What we found in GlobalFoundries was a company that was already a leader in RF technology and platforms but who we discovered had made enhancements to make millimeter wave design easier…”
Mike Noonan, Mixcomm CEO

Maximize performance & reliability

45RFSOI enables you to optimize your design’s performance and reliability with a combination of superior ft/fmax, Pout, insertion loss, gain and noise figure benefits paired with the industry’s first silicon-validated mmWave reliability model.

Minimize TCO

45RFSOI PA performance (up to
23 dBm Psat at > 40% PAE) enables you to minimize heat dissipation and achieve greater coverage using fewer base stations or equal coverage using smaller, lower-power base stations.

Made for mmWave

45RFSOI offers an optimized BEOL with thick copper levels and a high-resistivity trap rich substrate combined with device stacking and low Ron advantages for robust connectivity at mmWave frequencies.

Industry’s first silicon-validated
mmWave reliability model lets you predict ruggedness, aging and lifetime before design tape out.
Industry’s only Foundry with in-house
mmWave test capabilities, which build on two decades of RF leadership & expertise.

Featured Resources

* For both mobile and wireless infrastructure applications

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Integrated 5G mmWave infrastructure & SATCOM FEMs using 22FDX RF

Each generation of cellular technology has outpaced previous generations by delivering more immersive user experiences, higher reliability and more pervasive connectivity.

22FDX® RF enables you to harness exceptional power, performance and area benefits to develop a fully integrated monolithic 5G mmWave solution for cellular infrastructure and SATCOM front-end modules (FEMs). These benefits are critical to bringing new applications and services—including ultra HD video streaming from anywhere, autonomous driving and smart factories—to life.

Integrate more in less space

22FDX RF offers up to a 10% area scaling advantage paired with high-density logic and is the industry’s only solution that enables a fully integrated 5G mmWave RF SoC.

Superior performance & range

22FDX RF combines high Psat with 30% better receiver noise-figure and 50% better switch insertion-loss performance to help you boost signal strength and extend reach up to 6% for broader coverage.

Better power efficiency

With up to 20 dBm Psat and back gate control for low-power logic (0.4 V) operation, 22FDX RF can deliver approximately 2x more output power and 20% total power savings while minimizing heat dissipation.

22FDX RF is the industry’s only solution
that enables a single-chip 5G mmWave
Industry’s only Foundry with in-house mmWave test capabilities, which build on two decades of RF leadership & expertise.

Featured Resources

‡ Compared to GF 22 nm bulk CMOS process.
◊ Assumes 28 GHz band, TX and RX antenna gain of 20 dB, line of sight communication.

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5G sub-6 GHz cellular infrastructure FEMs using 8SW RF SOI

By 2025, mobile networks will carry roughly 164 Exabytes of traffic per month and more than 75% of that is forecast to be video.* 5G network deployments are fueling this growth by opening the door to richer user experiences—from ultra HD video streaming to live 360° views of sporting events or concerts—and by making them available to users any time and from anywhere around the globe.

Exploit our 8SW solution’s best-in-class switch and low-noise amplifier (LNA) performance to develop network hardware products with the capacity, speed and responsiveness that help make spectators feel as though they are enjoying those events in person, instead of watching remotely.

Maximize performance & range

Take advantage of 8SW’s best-in-class switch Ron*Coff and LNA noise figure, gain and linearity benefits paired with thick copper metal levels to boost signal quality, amplification and coverage area.

Enhance power efficiency

Enable power-efficient system level hardware by leveraging 8SW’s low-voltage SC libraries and shorter LNA gate length (Leff) options that enable better gain/linearity without affecting power consumption.

Capitalize on your investment

With 300 mm manufacturing and advanced processing and controls, 8SW enables you to get the most from your investment—and leverage more area for test sites and client-specific design variations.

8SW is industry’s 1st fully qualified
high-volume RF SOI Foundry solution
on 300 mm wafers.
Manufactured in globally
distributed fabs to help meet
supply & capacity demands.

Featured Resources

* Ericsson Mobility Report, June 2020.

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5G mmWave & sub-6 GHz cellular infrastructure discrete PAs using SiGe HP

High-performance SiGe BiCMOS (HP SiGe) solutions from GF meet the need for speed, integration and reliability in 5G FEMs for macro base stations and small cells. Our portfolio includes platforms ranging from 90 nm to 180 nm so you can balance performance, area and value in your design.

Advanced SiGe heterojunction bipolar transistors (HBTs) enable high-efficiency discrete power amplifiers (PAs) with high output power and gain (Psat > 23 dBm) for better coverage and signal quality, while enabling the solutions to operate at high junction temperatures.

The solutions offer reliability advantages over CMOS or SOI-based alternatives and feature a high resistivity substrate that reduces loss and further enhances power handling capabilities for higher performance in PAs, switches, LNAs and phase shifters.

Smaller arrays

Take advantage of outstanding Pmax, fmax and NF performance per element for fewer chips per array and smaller, cost-effective antenna arrays with equivalent effective isotropically radiated power (EIRP).

5G ready

GF’s SiGe 9HP offers best-in-class performance for 5G FEM beamformers, handling modulated 5G new radio waveforms that generate peaks of 2x the PA supply voltage while giving off less power as heat.

Design flexibility

An advanced copper metallization feature, available in SiGe 9HP, 8XP and 8HP, enables you to take advantage of 5x the current density at 100°C, or up to 25°C higher operating temperature at the same current density.

SiGe 9HP is the highest fmax SiGe BiCMOS foundry process in volume
production today, delivering 370 GHz fmax

Featured Resources

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