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RFCMOS

GLOBALFOUNDRIES has production-proven design enablement and manufacturing expertise in the field of RFCMOS across multiple technology nodes. GLOBALFOUNDRIES' RFCMOS capabilities were initially proven at 0.35µm & 0.25µm nodes, and subsequently developed and deployed at the 0.18µm, 0.13µm, 55nm and 65nm nodes. The 65nm RF solution was jointly developed with IBM under the Joint Development Alliance (JDA)

RFCMOS capabilities at the 40nm, 28nm nodes as well as the 0.11µm node are being developed. 

We have supplied large volume of solutions for a wide range of applications including, mobile communications, consumer electronics and computer networking. Examples of which are Bluetooth ICs, GPS & mobile phone Transceiver ICs and WiFi & WiMax Transceiver ICs. 

The breadth and depth of design enablement makes the technology accessible to a broad audience through enhancements in RF SPICE Models as well as predefined settings for the RF Physical Design Kits.

Key available features of the RF design kits are noted in the table below.

Features

Key RFCMOS Design Modules
  0.35um 0.25um 0.18um 0.13um 0.11um 65nm 55nm 40nm 28nm
MiM
In Development
In Development In Development
Inductor
Kits
Basic
Device Only
Basic
Device Only
Varactors
RF Spice
Models
Physical
Design Kits