Leading-Edge Technologies

GLOBALFOUNDRIES ramped 32nm high-k Metal Gate (HKMG) Super High Performance (SHP) technology to high volume production at Fab 1 in early 2011, the first foundry to do so. Our 28nm technologies are based on industry-standard bulk silicon substrates and utilize the same HKMG gate stack as our 32nm-SHP. The 28nm High Performance Plus (HPP) and Super Low Power (SLP) technologies are designed for a wide variety of applications from high-performance graphics and wired networking to low-power wireless mobile applications that require long battery lifetime. Both HPP and SLP utilize HKMG technology for superior control of the channel with high on currents and low leakage current. The 28nm technology offers the smallest SRAM cell size (0.120 µm2) currently reported in the foundry industry, delivering more than twice the gate density of industry standard 40nm processes. At 28nm, GLOBALFOUNDRIES will be on the second generation of HKMG technology and the third generation of immersion lithography. And since the 28nm technology is a direct shrink of 32nm, customers will benefit greatly from the high-volume ramp of our 32nm-SHP technology.

• 28nm Technology Platform
• Leading-Edge Technology Elements