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55nm Technology Offering

GLOBALFOUNDRIES™' 55nm Low Power Enhanced (LPe) technology platform offers customers an opportunity to leverage the maturity of design and process flow developed on the highly successful 65nm - LPe platform (in production since 2007) with the added advantage of maximizing gross die per wafer ( ~ 20% increase).

As is the hallmark of GLOBALFOUNDRIES™' offerings, 55nm - LPe offers robust and competitive design rules / SRAM offering and open access collaborative EDA/IP solutions.

Technology Offering

Transistors

1.2V VDD Core Devices

Low Vt
Regular Vt
High Vt

IO Devices

1.8V VDD (2.5V UD)
2.5V VDD
3.3V VDD (2.5V OD)
Memory/eFuse

Memory

High Performance 0.502um2 SP SRAM bitcell
High Density  0.425 um2 SP SRAM bitcell
DP 8T SRAM 0.789um2  bitcell
eFuse
eFuse bit cell