130/180nm

Ideal platforms for analog, power, mixed-signal and RF applications 

130-180nm-mainstreamGLOBALFOUNDRIES mainstream platforms from 180nm to 40nm offer mixed-technology solutions on volume production-proven, industry-compatible processes.

The 130/180nm platforms include mature process technology with proven track records, ideal for analog, power, mixed-signal and RF applications with flexible mixed-technology options for BCDlite®/BCD, high voltage and RF/mixed-signal. Available technologies include logic, analog/mixed-signal, high voltage/power, RF and embedded Flash/OTP/MTP memories. There are a variety of design-ready solutions with silicon-validated IP and process design kits (PDK) from GLOBALFOUNDRIES and leading EDA and IP partners.

Highlights

  • Best In Class D0
  • Mature technology with millions of wafers shipped
  • Target applications
    • Power, battery management, power over ethernet (POE)
    • Audio amplifiers, microcontrollers
    • AC-DC converters, LED lighting, motor drivers
    • Wireless transceivers, RF front end modules
  • IP ecosystem, with extended IP offerings through enabled IP partner program

Technology Platforms

BCDlite® a GLOBALFOUNDRIES innovation

  • Similar to BCD but with a simpler, more efficient and cost-effective process
  • Ideal for applications up to 65V
  • Used in PMICs and audio amplifiers for leading mobile phones/tablets
  • Modular process solutions

180nmBCDlite Platform

  • Single-gate 5V and dual-gate 1.8V/5V solutions
  • Best-in-class low Rdson HV devices
  • Multiple choice of passive solutions: HRES, Low TCR Res, MIM & MOM Cap, Zener & Schottky diodes, Hall Sensor device
  • Variety of IP supported: SRAM, eFUSE, OTP, MTP
  • Automotive Grade 1 Qualified

130nm BCDlite Platform

  • 1.5V and 5V CMOS process
  • Best-in-class low Rdson HV devices
  • Multiple choice of passive solutions: HRES, MIM & MOM Cap, Zener & Schottky diodes, 5V N/PMOS switch
  • Variety of IP supported: SRAM, eFUSE, OTP, MTP and eFlash

130nm BCD Platform

  • 1.5V and 5V CMOS Process
  • Best-in-class low Rdson HV devices
  • Extra HV support
  • Multiple choice of passive solutions: HRES,  MIM & MOM Cap, Zener & Schottky diodes, 5V N/PMOS switch
  • Variety of IP supported: SRAM, eFUSE, OTP, MTP and eFlash
  • Automotive Grade 0 (in development)

180nm MCU Platform

  • Single-gate 3.3V and single-gate 5V solutions
  • Cost-effective process with low mask count
  • Full IP solutions: SRAM, eFuse, OTP, MTP
  • Ideal for consumer MCU and analog/power applications

130G Platform

  • 1.2V and 2.5/3.3V solutions
  • Cost competitive with 110TS at 1.2V and 3.3V
  • Full IP solutions: SRAM, eFuse, OTP
  • Ideal for general purpose SoC for speed/power

130LP Platform

  • 1.5V and 3.3V solutions
  • Full IP solutions: SRAM, eFuse, OTP, EEPROM
  • Ideal for portable low power devices