22FDXTM Platform

22FDX offers the best combination of performance, power consumption and cost for IoT, mainstream mobile, RF connectivity, and networking.

22fdxGLOBALFOUNDRIES 22FDX™ platform employs 22nm Fully-Depleted Silicon-On-Insulator (FD-SOI) technology that delivers FinFET-like performance and energy-efficiency at a cost comparable to 28nm planar technologies. While some applications require the ultimate performance of three-dimensional FinFET transistors, most wireless devices need a better balance of performance, power consumption and cost. 22FDX provides the best path for cost-sensitive applications. The 22FDX platform delivers a 20 percent smaller die size and 10 percent fewer masks than 28nm, as well as nearly 50 percent fewer immersion lithography layers than foundry FinFET.

  • Ultra-low power consumption with 0.4V operation
  • Software-controlled transistor body-biasing for flexible trade-off between performance and power
  • Integrated RF for reduced system cost and back-gate feature to reduce RF power up to ~50%
  • 70% lower power than 28HKMG


The 22FDX™ platform consists of a family of differentiated products architected to enable applications across a variety of market segments:

22FDX-ulp: Ultra-low Power

22FDX-ull: Ultra-low Leakage

  • 70% lower power vs. 28nm HKMG
  • FinFET-like performance
  • Ultra low-voltage operation (~0.4V)
  • Dynamic tradeoff of performance vs. power with body-biasing
  • Additional devices for ultra-low static leakage (~1pA/μm)
  • ULL SRAM with <1pA/cell leakage
  • IP for BTLE, Zigbee and Thread
 

22FDX-rfa: RF & Analog

 
  • Integrated RF and Analog: reduced system cost and power
  • Resistors, capacitors, inductors, transmission lines, transformers
  • RF BEOL w/ Ultra Thick Metal stacks
  • RF design enablement to leverage body-bias
 

The 22FDX platform leverages existing design flows and tools. Design starter kits and process design kits (PDKs) are available now.